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PDF 2SA562 Data sheet ( Hoja de datos )
| Número de pieza | 2SA562 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SA562
-0.5A, -35V
PNP Plastic Encapsulated Transistor
FEATURES
Excellent hFE Linearity
CLASSIFICATION OF hFE
Product-Rank 2SA562-O
Range
70~140
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SA562-Y
120~240
TO-92
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Emitter
Collector
Base
Collector
Base
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-35
-30
-5
-500
500
150, -55~150
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Min.
-35
-30
-5
-
-
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
200
13
Max.
-
-
-
-0.1
-0.1
240
-0.25
-1
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
IC= -100μA, IE = 0A
IC= -1mA, IB = 0A
IE= -100μA, IC = 0A
VCB= -35 V, IE = 0 A
VEB= -5 V, IC = 0 mA
VCE= -1V, IC= -100mA
IC= -100mA, IB= -10mA
VCE= -1V , IC= -100mA
VCE = -6V, IC = -20mA
VCB = -6V, IE= 0A, f= 1MHz
http://www.SeCoSGmbH.com/
30-May-2012 Rev. C
Any changes of specification will not be informed individually.
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