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PDF 2N6519 Data sheet ( Hoja de datos )
| Número de pieza | 2N6519 | |
| Descripción | High Voltage Transistors | |
| Fabricantes | ON Semiconductor | |
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High Voltage Transistors
MAXIMUM RATINGS
Rating
2N6517
Symbol 2N6515 2N6519 2N6520
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VCEO 250 300 350 Vdc
VCBO 250 300 350 Vdc
VEBO
Vdc
6.0
5.0
Base Current
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
IB
IC
PD
250 mAdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
COLLECTOR
3
RqJA
RqJC
200 °C/W
83.3 °C/W
COLLECTOR
3
NPN
2N6515
2N6517
PNP
2N6519
2N6520
Voltage and current are negative
for PNP transistors
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
2
BASE
2
BASE
NPN
PNP
1
EMITTER
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6519
2N6517, 2N6520
V(BR)CEO
Vdc
250 —
300 —
350 —
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N6515
2N6519
2N6517, 2N6520
V(BR)CBO
Vdc
250 —
300 —
350 —
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
2N6515, 2N6517
2N6519, 2N6520
V(BR)EBO
Vdc
6.0 —
5.0 —
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
© Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 2
1
Publication Order Number:
2N6515/D
1 page  
NPN 2N6515 2N6517 PNP 2N6519 2N6520
1.0Ăk
700
500
300
200
100
70
50
30
20
10
1.0
NPN
PNP
2N6515, 2N6517
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
1.0Ăk
700
500
300
200
100
70
50
30
20
2N6519, 2N6520
td @ VBE(off) = 2.0 V
tr
VCE(off) = -100 V
IC/IB = 5.0
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
10
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10 -ā20 -ā30
IC, COLLECTOR CURRENT (mA)
Figure 7. Turn–On Time
-ā50 -ā70 -100
10Ăk
7.0Ăk
5.0Ăk
3.0Ăk
2.0Ăk
1.0Ăk
700
500
300
200
100
1.0
2N6515, 2N6517
ts
VCE(off) = 100 V
tf IC/IB = 5.0
IB1 = IB2
TJ = 25°C
2N6519, 2N6520
2.0Ăk
ts
1.0Ăk
700
500 tf
300
200
100
VCE(off) = -100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
70
50
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
30
20
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10 -ā20 -ā30 -ā50 -ā70 -100
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–Off Time
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N6519.PDF ] | |
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