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Número de pieza | KRLML6401 | |
Descripción | P-Channel Enhancement MOSFET | |
Fabricantes | Kexin | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KRLML6401 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SMD Type
P-Channel Enhancement MOSFET
IRLML6401 (KRLML6401)
MOSFET
■ Features
● Ultra low on-resistance.
● P-Channel MOSFET.
● Fast switching.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
11.. BGasaete
22..ESmiotutrecre
33..cDolraleicntor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=4.5V @ TA=25℃
Continuous Drain Current VGS=4.5V@ TA=70℃
Pulsed Drain Current a
Power Dissipation
@ TA=25℃
Power Dissipation
@ TA=70℃
Single Pulse Avalanche Energy b
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
TJ
Tstg
Rating
-12
±8
-4.3
-3.4
-34
1.3
0.8
33
100
0.01
150
-55 to 150
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.Starting TJ=25℃, L=3.5mH, RG=25Ω, IAS=-4.3A
Unit
V
A
W
mJ
℃/W
W/℃
℃
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1 page SMD Type
■ Typical Characterisitics
IRLML6401 (KRLML6401)
MOSFET
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
80 ID
TOP
-1.9A
-3.4A
BOTTOM -4.3A
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
10
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet KRLML6401.PDF ] |
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