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PDF 2N7002K Data sheet ( Hoja de datos )
| Número de pieza | 2N7002K | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | HOTTECH | |
| Logotipo |  |
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Plastic-Encapsulate Mosfets
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
VDS
VDGR
VGS
ID
IDM (1)
PTOT
Rthj- amb
Parameter
Drain-source voltage (VGSm=et0)
Drain-gate voltage (RGS =e2r0 kΩ)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Thermal resistance junction-ambient max
TJ, Tstg Operating junction temperature, Storage temperature
Ratings Unit
60 V
600 V
±015 V
0.35 A
1800 mA
80.85 W
357.1 (2) °C/W
- 55 to 150 °C
2N7002K
N-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
V(BR)GSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
IG = ±1 mA; VDS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 48 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 4.5 V; ID = 200 mA; Figure 7 and 8
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
ton turn-on time
toff turn-off time
Source-drain diode
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Figure 11
VDD = 50 V; RL = 250 Ω;
VGS = 10 V; RG = 50 Ω; RGS = 50 Ω
VSD
trr
Qr
source-drain (diode forward) voltage
reverse recovery time
recovered charge
IS = 300 mA; VGS = 0 V; Figure 12
IS = 300 mA; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 25 V
Min Typ Max Unit
60 75
55 -
16 22
12
0.6 -
--
-V
-V
-V
V
-V
-V
3.5 V
-
0.01 1
µA
- - 10 µA
- 50 500 nA
- 2.8 3.9 Ω
- 5.2 7.2 Ω
- 3.8 5.3 Ω
- 13 40 pF
- 8 30 pF
- 4 10 pF
- 3 10 ns
- 9 15 ns
- 0.93 1.5 V
- 30 - ns
- 30 - nC
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P5 -P1
1 page  
2N7002K Typical Characteristics
102
03aa46
Plastic-Encapsulate Mosfets
C
(pF)
10
Ciss
Coss
Crss
1
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
0.5
IS VGS = 0 V
(A)
0.4
0.3
03an73
15
VGS
(V)
10
ID = 0.5A
VDD = 48 V
Tj = 25 °C
03ab09
0.2
0.1
150 °C
Tj = 25 °C
5
0
0 0.3 0.6 0.9 1.2
VSD (V)
0
0 0.3 0.6 0.9 QG (nC) 1.2
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 0.5 A; VDD = 48 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P5 -P5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N7002K.PDF ] | |
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