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PDF 2N7000 Data sheet ( Hoja de datos )
| Número de pieza | 2N7000 | |
| Descripción | Logic N-Channel MOSFET | |
| Fabricantes | SemiWell | |
| Logotipo |  |
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 1. 60-V (D-S) MOSFET - Vishay  Hay una vista previa y un enlace de descarga de 2N7000 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SemiWell Semiconductor
Features
■ RDS(on) (Max 5 Ω )@VGS=10V
RDS(on) (Max 5.3Ω )@VGS=4.5V
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)
2N7000
Logic N-Channel MOSFET
Symbol
2. Gate {
{ 3. Drain
●
◀▲
●
●
{ 1. Source
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
TO-92
12 3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TA = 25°C)
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (TA=25°C)
Total Power Dissipation Single Operation (TA=70°C)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
Min.
-
(Note 1)
Value
60
200
500
±20
0.4
3.2
- 55 ~ 150
300
Value
Typ.
-
Max.
312.5
Units
V
mA
mA
V
W
mW
°C
°C
Units
°C/W
January, 2003. Rev. 0.
Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6
1 page  
2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
4.5V
VGS
VDS
Qgs
DUT
1mA
Fig 10. Switching Time Test Circuit & Waveforms
Qg
Qgd
Charge
VDS
10V
Pulse
Generator
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N7000.PDF ] | |
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