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PDF IRF840 Data sheet ( Hoja de datos )
| Número de pieza | IRF840 | |
| Descripción | N-Channel MOSFET Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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 1. Power MOSFET, TO-220AB - Vishay  Hay una vista previa y un enlace de descarga de IRF840 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF840
·FEATURES
·Drain Current –ID=8.0A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·DESCRITION
·Designed for high voltage, high speed switching power applic-
ations such as switching regulators, converters, solenoid and
relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
±20
V
V
ID Drain Current-Continuous
8A
IDM Drain Current-Single Plused
32 A
PD Total Dissipation @TC=25℃
125 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.0
62.5
℃/W
℃/W
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF840.PDF ] | |
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