PDF IRF830A Data sheet ( Hoja de datos )

Número de pieza	IRF830A
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	nELL
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No Preview Available ! SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors, UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. FEATURES RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF830A) D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 4.5 500 1.5 @ VGS = 10V 38 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS VDGR Drain to Source voltage(Note 1) Drain to Gate voltage TJ=25°C to 150°C RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current VGS=10V, TC=25°C VGS=10V, TC=100°C IDM Pulsed Drain current(Note 1) IAR Repetitive avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) EAS Single pulse avalanche energy(Note 2) lAR=4.5A, RGS=50Ω, VGS=10V lAS=4.5A, L=24mH dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD Derating factor above 25°C TC=25°C TJ Operation junction temperature TSTG Storage temperature TL Maximum soldering temperature, for 10 seconds 1.6mm from case Mounting torque, #6-32 or M3 screw Note: 1.Repetitive rating: pulse width limited by junction temperature. 2.VDD = 50V, L=24mH, lAS=4.5A, RG =25Ω, starting TJ =25°C 3.ISD ≤ 4.5A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS, starting TJ ≤ 150°C. VALUE 500 500 ±20 4.5 2.9 18 4.5 7.4 280 3.5 74 0.59 -55 to 150 -55 to 150 300 10 (1.1) UNIT V A mJ mJ V /ns W W /°C ºC lbf.in (N.m) www.nellsemi.com Page 1 of 7 1 page SEMICONDUCTOR 10 IRF830 Series RRooHHSS Nell High Power Products Fig.10 Maximum effective transient thermal impedance, Junction-to-Case 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-² 10-₅ 10-⁴ Single pulse (Thermal response) 10-³ 10-² PDM t1 t2 Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC 0.1 1 10 Rectangular Pulse Duration , t1 (seconds) Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms VDS VGS RG RD D.U.T. 10V Pulse width ≤ 1µs Duty Factor ≤ 0.1% + - VDD VDS 90% 10% VGS td(ON) tR td(OFF) tF Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms VDS L RG 10V tP D.U.T. lAS 0.01Ω Vary tp to obtain required IAS + - VDD A BVDSS lAS VDD www.nellsemi.com Page 5 of 7 lD(t) tp VDS(t) Time 5 Page

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