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Numéro de référence | IRF634A | ||
Description | Advanced Power MOSFET | ||
Fabricant | ART CHIP | ||
Logo | |||
1 Page
FEATURES
z Avalanche Rugged Technology
z Rugged Gate Oxide Technology
z Lower Input Capacitance
z Extended Safe Operating Area
z Lower Leakage Current:10µA (Max.)@VDS=250V
z Lower RDS(ON): 0.327 Ω(Typ.)
IRF634A
Advanced Power MOSFET
BVDSS=250V
RDS(on)=0.45Ω
ID=8.1A
TO-220
1. Gate 2. Drain 3.Source
Absolute Maximum Ratings
Symbol
Characteristic
VDSS
ID
Drain-to-Source Voltage
Continuous Drain Current (Tc=25 )
Continuous Drain Current (Tc=100 )
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain Current-Pulsed (1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy (2)
Avalanche Current (1)
Repetitive Avalanche Energy (1)
Peak Diode Recovery dv/dt (3)
PD Total Power Dissipation (Tc=25 )
Linear Derating Factor
TJ, TSTG
Operating Junction and
Storage Temperature Range
TL Maximum Lead Temp. for Soldering
Purposes, 1/8. from case for 5-seconds
Value
250
8.1
5.1
32
±30
205
8.1
7.4
4.8
74
0.59
-55 to +150
300
Thermal Resistance
Symbol
characteristic
RӨJC
RӨCS
RӨJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
-
0.5
-
Max.
1.69
-
62.5
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
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Pages | Pages 6 | ||
Télécharger | [ IRF634A ] |
No | Description détaillée | Fabricant |
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