|
|
Numéro de référence | BAS316 | ||
Description | 200 mW SURFACE MOUNT SWITCHING BARRIER | ||
Fabricant | TIPTEK | ||
Logo | |||
1 Page
BAS316
200 mW SURFACE MOUNT SWITCHING BARRIER
FEATURES
HIGH SWITCHING SPEED
SURFACE MOUNT PACKAGE IDEALLY SUITED
FOR AUTOMATIC INSERTION
ELECTRICALLY IDENTICAL TO STANDERD JEDEC
HIGH CONDUCTANCE
BOTH NORMAL AND Pb FREE PRODUCT
ARE AVAILABLE:
NORMAL:80~95%Sn,5~20%Pb
Pb FREE:98.5% Sn ABOVE
MECHANICAL DATA
CASE:SOD-323,PLASTIC
TERMINALS:SOLDERABLE PER MIL-STD-750,
METHOD2026
APPROX. WEIGHT: 0.00465 GRAM
Pb Free: BAS316
Halogen Free: BAS316-H
CASE:SOD-323
DIMENSIONS IN MILLIMETERS AND (INCHES)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
PARAMETER
SYMBOL
DC REVERSE VOLTAGE
MAXIMUM AVERAGE FORWARD CURRENT
MAXIMUM PEAK FORWARD SURGE CURRENT
POWER DISSIPATION DERATE ABOVE 25℃
JUNCTION TEMPERATURE
STORAGE TEMPERATURE
VR
IO
IFSM
PD
TJ
TSTG
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
MAXIMUM INSTANTANEOUS FORWARD VOLTAGE@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
MAXIMUM DC REVERSE CURRENT @VR=75V
REVERSE RECOVERY TIME
IF=IR=10mA RL=50Ω
FORWARD RECOVERY VOLTAGE
IF= IR=10 mA , tr=20ns
DIODE CAPACITANCE AT VR=0V,f=1MHz
VF
IR
trr
VFR
CD
BAS316
75
200
500
200
150
- 55 TO +150
BAS316
715
855
1000
1250
1.0
6
1.75
2.0
UNITS
V
mA
mA
mW
℃
℃
UNITS
mV
µA
ns
V
pF
STD-2008-Z3
PAGE.1
|
|||
Pages | Pages 2 | ||
Télécharger | [ BAS316 ] |
No | Description détaillée | Fabricant |
BAS31 | DUAL SURFACE MOUNT SWITCHING DIODE | TRSYS |
BAS31 | High Voltage General Purpose Diode | Fairchild Semiconductor |
BAS31 | General purpose controlled avalanche double diodes | NXP Semiconductors |
BAS31 | SURFACE MOUNT SWITCHING DIODES | Jinan Gude Electronic Device |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |