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PDF MBRB20200CT Data sheet ( Hoja de datos )
| Número de pieza | MBRB20200CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Galaxy Microelectronics | |
| Logotipo |  |
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Production specification
Schottky Barrier Rectifier MBRB20150CT--MBRB20200CT
FEATURES
z Metal-Semicondutcor Junction With Guard Ring.
Pb
z Epitaxial Construction.
Lead-free
z Low Forward Voltage Drop,Low Switching Losses.
z High Surge Capacity.
z For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
TO-263
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBRB20150CT MBRB20200CT Unit
VRRM
Recurrent Peak Reverse Voltage
150 200 V
VRMS
VDC
I(AV)
IFSM
RθJC
Tj Tstg
RMS Reverse Voltage
DC Blocking Voltage
Average Forward Total Device Rectified Current
@TA=100℃
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimosed on Rated Load
Typical Thermal Resistance Junction to Case
(Note 1)
Operating Junction and StorageTem-perature Range
105 140
150 200
20
150
1.5
-55 to +150
V
V
A
A
℃/W
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Current
Symbol Test conditions
IR
VR=VRRM,TA=25℃
VR=VRRM,TA=125℃
MBRB20150CT MBRB20200CT
MAX
0.1
50
UNIT
mA
Forward Voltage
VF
IF=10A
0.90 0.95 V
O026
Rev.A
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| PDF Descargar | [ Datasheet MBRB20200CT.PDF ] | |
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