(PDF) MBRB10150CT-B Datasheet - SCHOTTKY BARRIER RECTIFIER

Número de pieza	MBRB10150CT-B
Descripción	SCHOTTKY BARRIER RECTIFIER
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate Diodes MBRB10150CT-B SCHOTTKY BARRIER RECTIFIER FEATURES  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  Low Power Loss,High Efficiency  High Surge Capability  High Current Capability and Low Forward Voltage Drop TO-263-2L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR(RMS) IO IFSM PD RΘJA Tj Tstg RMS reverse voltage Average rectified output current Non-Repetitive peak forward surge current 8.3ms half sine wave Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 150 105 10 120 2 50 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage V(BR) IR=0.1mA Reverse current IR VR=150V Forward voltage IF=5A VF IF=10A Typical total capacitance Ctot VR=4V,f=1MHz Min 150 Unit V V A A W ℃/W ℃ ℃ Typ Max Unit V 0.05 mA 0.9 V 1V 70 pF www.cj-elec.com 1 A-2,Mar,2016 1 page

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PDF MBRB10150CT-B Data sheet ( Hoja de datos )