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Numéro de référence | MBRB1080CT | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Galaxy Microelectronics | ||
Logo | |||
Production specification
Schottky Barrier Rectifier MBRB1080CT---MBRB10100CT
FEATURES
z High Surge Capacity.
z For Use In Low Voltage,High Frequency Inver- Pb
Lead-free
ters,Free Wheeling,And Polarity Protection
Applications.
z Metal Silicon Junction,Majority Carrier Conduction.
z High Current Capacity,Low Forward Voltage Drop.
z Guard Ring for Over Voltage Protection.
TO-263
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBRB1080CT MBRB10100CT Unit
VRRM
Recurrent Peak Reverse Voltage
80 100 V
VRMS
RMS Reverse Voltage
VDC
IF(AV)
IFSM
DC Blocking Voltage
Average Forward Rectified total devicce
Current @TA=100℃ per leg
Peak Forward Surge Current 8.3ms Single
Half Sine-wave Superimosed on Rated Load
RθJC
Tj Tstg
Typical Thermal Resistance Junction to Case
Operating Junction and StorageTem-perature
Range
56 70
80 100
10
5.0
120
4.4
-55 to +150
V
V
A
A
℃/W
℃
X005
Rev.A
www.gmicroelec.com
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Pages | Pages 3 | ||
Télécharger | [ MBRB1080CT ] |
No | Description détaillée | Fabricant |
MBRB1080CT | Schottky Barrier Rectifier ( Diode ) | Galaxy Microelectronics |
MBRB1080CT | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |
MBRB1080CT-G | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |
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