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Numéro de référence | 2N3849 | ||
Description | NPN Transistor | ||
Fabricant | Microsemi | ||
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1 Page
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2N3849 (#23145)
RFQ/Sample
NPN Transistor
Division
Lawrence
Mil -Spec
(none)
Shipping
(none)
Datasheet
Qual Data
(none)
Contact Microsemi
Package
TO-63(STD)
Maximum Electrical Rating
Power Dissipation
Collector Current
Breakdown Voltage Collector -to-Base
Voltage Collector to Emitter Open
Voltage Emitter to Base Open
Symbol
Power
IC
BV(CBO)
VCEO
BVEBO
Max Unit
150 W
20 A
400 V
300 V
10 V
Electrical Rating
Symbol Min Typ Max Unit
Collector Emitter Saturation Voltage
(IB=2 mA, IC=15 mA, TA=25 ºC,300µ s pulse) VCE(sat)
1V
DC Current Gain
(IC=15 mA, TA=25 ºC,300µ s pulse)
HFE 40
200
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Télécharger | [ 2N3849 ] |
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