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PDF 2N6031 Data sheet ( Hoja de datos )
| Número de pieza | 2N6031 | |
| Descripción | PNP SILICON POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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2N6031
PNP SILICON
POWER TRANSISTOR
140 VOLTS, 200 WATTS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6031 is
a 16 Ampere PNP Silicon Power Transistor
designed for use in high power amplifiers and
high voltage switching regulator circuits.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
140
140
7.0
16
20
5.0
200
-65 to +200
0.875
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=140V
ICEX
VCE=140V, VEB(off)=1.5V
ICEX
VCE=140V, VEB(off)=1.5V, TC=150°C
ICEO
VCE=70V
IEBO
VEB=7.0V
BVCEO
IC=200mA
140
VCE(SAT)
IC=10A, IB=1.0A
VCE(SAT)
IC=16A, IB=4.0A
VBE(SAT)
IC=10A, IB=1.0A
VBE(ON)
VCE=2.0V, IC=8.0A
hFE VCE=2.0V, IC=8.0A
15
hFE VCE=2.0V, IC=16A
4.0
fT
VCE=20V, IC=1.0A, f=500kHz
1.0
Cob VCB=10V, IE=0, f=100kHz
hfe
VCE=10V, IC=4.0A, f=1.0kHz
15
MAX
2.0
2.0
7.0
2.0
5.0
1.0
2.0
1.8
1.5
60
1000
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
pF
R0 (27-August 2009)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6031.PDF ] | |
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