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Numéro de référence | MBRB10150CT | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Galaxy Microelectronics | ||
Logo | |||
1 Page
Production specification
Schottky Barrier Rectifier MBRB10150CT…MBRB10200CT
FEATURES
z Metal-Semiconductor junction with guard ring.
z Epitaxial construction.
Pb
z
Lead-free
Low forward voltage drop,low switching losses.
z High surge capacity.
z For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications.
z The plastic material carries U/L recognition 94V-0.
TO-263
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBRB10150CT MBRB10200CT Unit
VRRM
Recurrent Peak Reverse Voltage
150 200 V
VRMS
RMS Reverse Voltage
VDC
IF(AV)
IFSM
DC Blocking Voltage
Average Forward Total Device Rectified
Current
@TA=100℃
Peak Forward Surge Current 8.3ms Single
Half Sine-wave Superimosed on Rated Load
RθJC
Tj Tstg
Typical Thermal Resistance Junction to Case
Operating Junction and StorageTem-perature
Range
105 140
150 200
10
120
1.5
-55 to +150
V
V
A
A
℃/W
℃
O005
Rev.A
www.gmicroelec.com
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Pages | Pages 3 | ||
Télécharger | [ MBRB10150CT ] |
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