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PDF MBRF10100CT Data sheet ( Hoja de datos )

Número de pieza MBRF10100CT
Descripción Schottky Rectifier ( Diode )
Fabricantes SANGDEST MICROELECTRONICS 
Logotipo SANGDEST MICROELECTRONICS Logotipo



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No Preview Available ! MBRF10100CT Hoja de datos, Descripción, Manual

SANGDEST
MICROELECTRONICS
MBRF10100CT
Technical Data
Data Sheet N0189, Rev. A
MBRF10100CT SCHOTTKY RECTIFIER
Applications:
Green Products
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
150 °C T J operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
OUTLINE DRAWING
OPTION 1(CJ) OPTION 2(HD)
Dim Min Max Min Max
A 4.35 4.65 4.30 4.70
b 0.50 0.75 0.50 0.75
b1 1.15 1.402 1.20 1.45
b2 1.55 1.802 1.60 1.85
b3 1.55 1.65 1.50 1.75
b4 1.10 1.35 1.10 1.35
C 0.50 0.75 0.55 0.75
D 14.8 15.2 14.80 15.20
E 10.06 10.26 9.96 10.36
e 2.46 2.62 2.55TYP
F 2.85 3.15 2.80 3.20
G 6.50 6.90 6.50 6.90
L 12.70 13.70 12.70 13.70
L1 3.40 3.80 3.40 4.00
L2 2.60 3.00 -
-
Q 2.60 2.80 2.50 2.90
Q1 2.50 2.90 2.50 2.90
ØR 3.40 3.60 3.30 3.70
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

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MBRF10100CT pdf
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0189, Rev. A
MBRF10100CT
Green Products
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current at DC
condition (per leg)
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
RSM Isolation Voltage
(t = 1.0 second, R. H. < =30%,
TA = 25 °C)
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
VISO
Condition
@ 5A, Pulse, TJ = 25 °C
@ 5A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Clip mounting, the epoxy body
away from the heatsink edge by
more than 0.110" along the lead
direction.
Clip mounting, the epoxy body is
inside the heatsink.
Screw mounting, the epoxy body
is inside the heatsink.
Max.
0.85
0.75
1.0
15
300
8.0
10,000
4500
3500
1500
Units
V
V
mA
mA
pF
nH
V/µs
V
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
-
RθJC DC operation
wt -
ITO-220AB
Specification
-55 to +150
-55 to +150
Units
°C
°C
4.5 °C/W
2g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

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