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PDF VS-MURD620CTHM3 Data sheet ( Hoja de datos )
| Número de pieza | VS-MURD620CTHM3 | |
| Descripción | Ultrafast Rectifier ( Diode ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-MURD620CTHM3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
TO-252AA (D-PAK)
Base
common
cathode
4
2
Common
cathode
13
Anode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-252AA (D-PAK)
2x3A
200 V
0.96 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-MURD620CTHM3 is the state of the art ultrafast
recovery rectifier specifically designed with optimized
performance of forward voltage drop and ultrafast recovery
time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
Peak repetitive forward current per diode
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
Total device, rated VR, TC = 146 °C
Rated VR, square wave, 20 kHz, TC = 146 °C
MAX.
200
6
50
6
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
VBR,
VR
VF
IR
CT
LS
IR = 100 μA
IF = 3 A
IF = 3 A, TJ = 125 °C
IF = 6 A
IF = 6 A, TJ = 125 °C
VR = VR rated
TJ = 125 °C, VR = VR rated
VR = 200 V
Measured lead to lead 5 mm from package body
200
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1.0
0.96
1.2
1.13
5
250
-
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1 Document Number: 94742
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-MURD620CTHM3
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
5 Document Number: 94742
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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