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MAC216A-6 fiches techniques PDF

Digitron Semiconductors - SILICON BIDIRECTIONAL THYRISTORS

Numéro de référence MAC216A-6
Description SILICON BIDIRECTIONAL THYRISTORS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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MAC216A-6 fiche technique
MAC216(A) SERIES
High-reliability discrete products
and engineering services since 1977
SILICON BIDIRECTIONAL THYRISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Peak repetitive off-state voltage, gate open
MAC216(A)-4
MAC216(A)-6
MAC216(A)-7
MAC216(A)-8
200
VDRM
400
500
600
Peak gate voltage
VGM 10
RMS on-state current (TC = 80°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz)
IT(RMS)
ITSM
6
60
Circuit fusing considerations (t = 1.0ms)
I2t 18
Critical rate of rise of on-state current
di/dt 10
Peak gate power (pulse width = 10µs)
PGM 10
Average gate power (TC = 80°C, t = 8.3ms)
Peak gate current (pulse width = 10µs)
Operating junction temperature range
PG(AV)
IGM
TJ
0.5
3.5
-40 to +100
Storage temperature range
Tstg -40 to +125
Unit
Volts
Volts
Amps
Amps
A2s
A/µs
Watts
Watts
Amps
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal resistance, junction to case
RӨJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak off state current (1)
(Rated VDRM = peak off state voltage, gate open @ TC = 25°C)
(Rated VDRM = peak off state voltage, gate open @ TC = 100°C)
Peak on-state voltage (1)
(Pulse width = 1.0ms, duty cycle < 2%, ITM = 8.5A peak)
Critical rate of rise of off-state voltage (1)
(Rated VDRM, gate open, exponential waveform, TC = 100°C)
Critical rate of rise of commutating off-state voltage (1)
(IT(RMS) = Rated RMS on-state current, VDRM = rated peak off-state voltage, gate open,
commutating di/dt = 3.2A/ms)
Maximum
2.2
Unit
°C/W
Symbol Min Typ. Max Unit
IDRM
VTM
dv/dt
-
0.01 0.1
mA
- 0.2 0.5
- 1.4 1.83 Volts
50 100
- V/µs
dv/dt(c)
4
-
- V/µs
Rev. 20131205

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