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2KBP02 fiches techniques PDF

EIC - SILICON BRIDGE RECTIFIERS

Numéro de référence 2KBP02
Description SILICON BRIDGE RECTIFIERS
Fabricant EIC 
Logo EIC 





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2KBP02 fiche technique
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
2KBP005 - 2KBP10
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.448 (11.4)
0.433 (11.0)
0.696 (17.7)
MIN.
0.051 (1.30)
0.043 (1.10)
KBP
0.59 (14.9)
0.57 (14.5)
+ AC AC
Φ3
0.0307 (0.78)
0.0303 (0.77)
0.150 (3.82)
0.148 (3.78)
0.151 (3.85 )
0.147 (3.75)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.d
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current Ta= 55°C
Peak Forward Surge Current, Single sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Instantaneous Forward Voltage drop at IF =1.0 A, TJ=25ºC
Maximum DC Reverse Current
Ta= 25 °C
at Rated DC Blocking Voltage per element Ta= 125 °C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
2KBP
005
2KBP
01
2KBP
02
2KBP
04
2KBP
06
2KBP
08
2KBP
10
UNIT
VRRM
50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
IF(AV) 2.0 A
IFSM
60 A
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
15
1.0
10
500
25
30
- 50 to + 165
- 50 to + 165
A2S
V
μA
μA
pF
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
Page 1 of 2
Rev. 04 : December 10, 2009

PagesPages 2
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