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PDF 3N253 Data sheet ( Hoja de datos )
| Número de pieza | 3N253 | |
| Descripción | DUAL GATE MOSFET VHF AMPLIFIER | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3N253 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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3N253-3N259
High-reliability discrete products
and engineering services since 1977
DUAL GATE MOSFET VHF AMPLIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol 3N253 3N254 3N255 3N256 3N257
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
35 70 140 280 420
50 100 200 400 600
Maximum average forward output rectified
current at TA = 50°C
IF(AV)
2.0
Peak forward surge current single half-sine
wave superimposed on rated load
TJ= 150°C
Rating for fusing (t < 8.3ms)
IFSM
I2t
60.0
15.0
Typical thermal resistance per leg (1)
RӨJA
RӨJL
30.0
11.0
Operating and storage temperature range
TJ, Tstg
-55 to +165
Note 1: Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.47 x 0.47” copper pads.
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
Maximum instantaneous forward voltage
drop per leg at 3.14A
Maximum DC reverse current at rated DC
blocking voltage per leg
TA = 25°C
TA = 125°C
Typical junction capacitance
Symbol
VF
3N253
3N254
3N255
3N256
1.1
3N257
IR 5
500
CJ 25
3N258
800
560
800
3N258
3N259
1000
700
1000
3N259
Units
Volts
Volts
Volts
Amps
Amps
A2s
°C/W
°C
Units
Volts
µA
pF
Rev. 20130423
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3N253.PDF ] | |
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