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Microsemi - NPN Transistor

Numéro de référence 2N2814
Description NPN Transistor
Fabricant Microsemi 
Logo Microsemi 





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2N2814 fiche technique
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2N2814 (#23003)
RFQ/Sample
NPN Transistor
Division
Lawrence
Mil -Spec
(none)
Shipping
(none)
Datasheet
Qual Data
(none)
Contact Microsemi
Package
TO-61(STD)
Maximum Electrical Rating
Power Dissipation
Collector Current
Breakdown Voltage Collector -to-Base
Voltage Collector to Emitter Open
Voltage Emitter to Base Open
Symbol
Power
IC
BV(CBO)
VCEO
BVEBO
Max Unit
70 W
10 A
120 V
80 V
8V
Electrical Rating
Symbol Min Typ Max Unit
Collector Emitter Saturation Voltage
(IB=0.5 mA, I C=5 mA, TA=25 ºC,300µ s pulse) VCE(sat)
0.5 V
DC Current Gain
(IC=5 mA, TA=25 ºC,300µ s pulse)
HFE 40
120
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