|
|
Numéro de référence | 2N2814 | ||
Description | NPN Transistor | ||
Fabricant | Microsemi | ||
Logo | |||
1 Page
ISCFdÈ,$6¶,$6¶ text/html
About
keyword
search:
News
Contact Employment Site
part number
search:
Home
2N2814 (#23003)
RFQ/Sample
NPN Transistor
Division
Lawrence
Mil -Spec
(none)
Shipping
(none)
Datasheet
Qual Data
(none)
Contact Microsemi
Package
TO-61(STD)
Maximum Electrical Rating
Power Dissipation
Collector Current
Breakdown Voltage Collector -to-Base
Voltage Collector to Emitter Open
Voltage Emitter to Base Open
Symbol
Power
IC
BV(CBO)
VCEO
BVEBO
Max Unit
70 W
10 A
120 V
80 V
8V
Electrical Rating
Symbol Min Typ Max Unit
Collector Emitter Saturation Voltage
(IB=0.5 mA, I C=5 mA, TA=25 ºC,300µ s pulse) VCE(sat)
0.5 V
DC Current Gain
(IC=5 mA, TA=25 ºC,300µ s pulse)
HFE 40
120
Privacy Policy | Site Map
PPG Webex Port|aPl PG Extranet Login
Avionics| Backlight Inverte|rsL-Band Rada|rLED Driver| LDMOS & VDMOS| MOSFETs, IGBTs, & Diode| sPin
Diodes| Power Modules
RF Power & Bipolar Transist|oSrs-Band Rada|rSCR| Thyristors| Varacter Diode| WLAN Power Amplifie|rZener
Diode| PoE| PoE ICs
Copyright © 2007 Microsemi Corporation. All rights reserved
|
|||
Pages | Pages 1 | ||
Télécharger | [ 2N2814 ] |
No | Description détaillée | Fabricant |
2N2811 | Trans GP BJT NPN 60V 10A 3-Pin TO-61 | New Jersey Semiconductor |
2N2811 | NPN Transistor | Microsemi |
2N2812 | NPN Transistor | SSDI |
2N2812 | Trans GP BJT NPN 60V 10A 3-Pin TO-61 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |