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PDF 2N6666 Data sheet ( Hoja de datos )
| Número de pieza | 2N6666 | |
| Descripción | Silicon PNP Darlington Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6666
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
·Complement to Type 2N6386
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-40 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8 A
ICM Collector Current-Peak
-15 A
IBB Base Current-DC
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-250
65
2
150
-65~150
mA
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.92 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6666.PDF ] | |
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