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PDF 2N6308 Data sheet ( Hoja de datos )
| Número de pieza | 2N6308 | |
| Descripción | Transistor | |
| Fabricantes | Multicomp | |
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Transistor
Description:
High voltage, TO-3, NPN, Silicon, Power Transistor. Designed for high voltage
inverters, switching regulators and line – operated amplifier applications.
Especially well suited for switching power supply applications in associated
consumer products.
Features:
• Low Collector Emitter Saturation Voltage : VCE(sat) 1.5V(Max.) @ IC - 3A
• Current Gain-bandwidth Product : 5MHz (Min.) @ IC - 0.3A
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO
Collector-Emitter Voltage, VCEO
Emitter-Base Voltage, VEBO
Continuous Collector Current, IC
Base Current IB
Total Device Dissipation (TC = +25°C), PD
Derate above 25°C
Operating Junction Temperature Range, TJ
Storage Temperature Range, Tstg
: 700V
: 350V
: 8V
: 8A
: 4A
: 125W
: 0.714mW/°C
: -65°C to +200°C
: -65°C to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON Characteristics (Note 1)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation VoItage
V(BR)CEO
lCEX
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Ic = 100mA, IB = 0
VCE = 700V, VEB(off) = 1.5V
VCB = 350V, IB = 0
VEB = 8V, IC = 0
VCE = 5V, IC = 3A
VCE = 5V, IC = 8A
IC = 3A, IB = 0.6A
IC = 8A, IB = 2.67A
IC = 8A, IB = 2.67A
Base-Emitter On Voltage
VBE(on)
IC = 3A, VCE = 5V
Min. Max. Unit
350 -
V
- 0.5
- 0.5 mA
-1
12 60
-
3--
- 1.5
-5
- 2.5 V
- 1.5
www.element14.com
www.farnell.com
www.newark.com
Page <1>
07/09/12 V1.0
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6308.PDF ] | |
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