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Numéro de référence | 2N6387 | ||
Description | SILICO NPN POWER DARLINGTON TRANSISTORS | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
2N6387
2N6388
SILICO NPN POWER DARLINGTON TRANSISTORS
s 2N6388 IS SGS-THOMSON PREFERRED
SALESTYPE
s NPN DARLINGTON
s HIGH CURRENT CAPABILITY
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The 2N6387 and 2N6388 are silicon
epitaxial-base NPN power transistor in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package.
They are inteded for use in low and medium
frequency power applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEV
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Collector-Base Voltage (IB = 0)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (RBE ≤ 100Ω)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
June 1997
R1 Typ. = 10 KΩ
R2 Typ. = 160 Ω
Value
2N6387
2N6388
60 80
60 80
60 80
60 80
5
10
15
0.25
65
-65 to 150
150
Unit
V
V
V
V
V
A
A
A
W
oC
oC
1/4
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Pages | Pages 4 | ||
Télécharger | [ 2N6387 ] |
No | Description détaillée | Fabricant |
2N6380 | Trans GP BJT PNP 80V 50A 3-Pin TO-63 | New Jersey Semiconductor |
2N6381 | Trans GP BJT PNP 100V 50A 3-Pin TO-63 | New Jersey Semiconductor |
2N6383 | POWER TRANSISTORS(10A/100W) | Mospec Semiconductor |
2N6383 | NPN DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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