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STMicroelectronics - SILICO NPN POWER DARLINGTON TRANSISTORS

Numéro de référence 2N6387
Description SILICO NPN POWER DARLINGTON TRANSISTORS
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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2N6387 fiche technique
2N6387
2N6388
SILICO NPN POWER DARLINGTON TRANSISTORS
s 2N6388 IS SGS-THOMSON PREFERRED
SALESTYPE
s NPN DARLINGTON
s HIGH CURRENT CAPABILITY
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The 2N6387 and 2N6388 are silicon
epitaxial-base NPN power transistor in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package.
They are inteded for use in low and medium
frequency power applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEV
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Collector-Base Voltage (IB = 0)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (RBE 100)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc 25 oC
Storage Temperature
Max. Operating Junction Temperature
June 1997
R1 Typ. = 10 K
R2 Typ. = 160
Value
2N6387
2N6388
60 80
60 80
60 80
60 80
5
10
15
0.25
65
-65 to 150
150
Unit
V
V
V
V
V
A
A
A
W
oC
oC
1/4

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