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Digitron Semiconductors - SILICON CONTROLLED RECTIFIERS

Numéro de référence GA301
Description SILICON CONTROLLED RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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GA301 fiche technique
GA300(A)-GA301(A)
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Repetitive Peak Off State Voltage
Repetitive Peak On-State Current
Peak Gate Current
Average Gate Current
Reverse Gate Current
Reverse Gate Voltage
Storage Temperature Range
Operating Temperature Range
VDRM
ITRM
IGM
IG(AV)
IGR
VGR
GA300
GA300A
60V
Up to 100A
250 mA
25 mA
3 mA
5V
-65 to +150°C
0 to +125°C
GA301
GA301A
100V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Test Symbol Min Typical
Max
Units
Conditions
Delay Time
Rise Time (Note 1)
GA300, GA300A
Rise Time (Note 1)
GA301, GA301A
Circuit Commutated Turn Off Time
GA300, GA301
GA300A, GA301A
td
-
20
10
30
-
ns
tr
-
15
25
25
-
ns
tr
-
10
20
20
-
ns
tq
-
0.8 2.0
µs
0.3 0.5
IG = 20 mA, IT = 1 A
IG = 30 mA, IT = 1A
VD = 60 V, IT = 1 A
VD = 60 V, IT = 30 A (Note 1)
VD = 100 V, IT = 1A
VD = 100 V, IT = 30 A (Note 1)
IT = 1 A, IR = 1 A, RGK = 1K
Gate Trigger On Pulse Width
tpg(on)
-
0.02 0.05
µs
IG = 10 mA, IT = 1 A
Off-State Current
Reverse Current (Note 2)
IDRM
-
-
0.01 0.1
20 100
µA
VDRM = Rating, RGK = 1K, T = 25°C
VDRM = Rating, RGK = 1K, T = 125°C
IRRM - 1.0 10 mA
VRRM = 30 V, RGK = 1 K (Note 2)
Gate Trigger Voltage
VGT
0.4
0.10
0.6
0.2
0.75
-
V
VD = 5V, RGS = 100 Ω, T = 25°C
VD = 5 V, RGS = 100 Ω, T = 125°C
Gate Trigger Current
IGT - 10 200 µA
VD = 5 V, RGS = 10 K
On-State Voltage
VT
-
1.1 1.5
V
IT = 2 A
Off-State Voltage – Critical Rate of Rise
dV/dt
15
30
- V/µs
VD = 30 V, RGK = 1 K
Reverse Gate Current
IGR
-
0.01 0.1
mA
VGR = 5 V
Holding Current
IH
0.3 2.0
0.05 0.4
5.0
-
mA
VD = 5V, RGK = 1 K, T = 25°C
VD = 5 V, RGK = 1 K, T = 125°C
Note 1 – IG = 10 mA, Pulse Test: Duty Cycle < 1%.
Note 2 – Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.
Rev. 20130116

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