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1N4002E fiches techniques PDF

Zowie Technology Corporation - SILICON RECTIFIER

Numéro de référence 1N4002E
Description SILICON RECTIFIER
Fabricant Zowie Technology Corporation 
Logo Zowie Technology Corporation 





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1N4002E fiche technique
1N4001E THRU 1N4007E
SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
A-405
1.0(25.4)
MIN.
0.025(0.60)
DIA.
0.021(0.50)
FEATURES
* High relliability
* Low reverse leakage
* Low forward voltage drop
* High current capability
0.205(5.2)
0.166(4.2)
1.0(25.4)
MIN.
0.107(2.70)
0.080(2.00)
MECHANICAL DATA
*Dimensions in inches and (millimeters)
Case : JEDEC A-405 molded plastic
Epoxy : UL 94V-O rate flame retardant
Lead : MIL-STD-202F method 208C guaranteed
Mounting Position : Any
Weight : 0.20 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature
unless otherwise specified.
SYMBOLS 1N4001E 1N4002E 1N4003E 1N4004E 1N4005E 1N4006E 1N4007E UNITS
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS voltage
VRMS
35
70 140 280 420 560 700 Volts
Maximum DC blocking voltage
VDC
50 100 200 400 600 800 1000 Volts
Maximum average forward rectified current
at TA=55oC
I(AV)
1.0 Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0 A
IFSM
VF
30 Amps
1.1 Volts
Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length at TL=75oC
IR(AV)
30
uA
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance ( NOTE )
TA=25oC
TA=100oC
IR
CJ
5.0
uA
50
15 pF
Typical thermal resistance
R JA
50 oC / W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
oC
NOTES : Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
REV. : 0
Zowie Technology Corporation

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