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2N1870A fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTFIERS

Numéro de référence 2N1870A
Description SILICON CONTROLLED RECTFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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2N1870A fiche technique
2N1870A-2N1874A
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Repetitive peak off state voltage
Repetitive peak reverse voltage
DC on state current
100°C ambient
100°C case
Repetitive peak on state current
Peak one cycle surge (non-repetitive) on state
current
Peak gate current
Average gate current
Reverse gate voltage
Thermal resistance, junction to case
Operating and storage temperature range
Symbol
VDRM
VRRM
IT
ITRM
ITSM
IGM
IG(AV)
VGR
RӨJC
TJ, Tstg
2N1870A
30
30
2N1871A
60
60
2N1872A
100
100
250
1.25
Up to 30
15
250
25
5
20
-65 to 150
2N1873A
150
150
2N1874A
200
200
Unit
V
V
mA
A
A
A
mA
mA
V
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Test Symbol Min. Typ. Max.
Units
25°C tests
Off-state current
Reverse current
Gate trigger voltage
Gate trigger current
On-state voltage
Off-state voltage – critical rate of rise
Reverse gate current
Holding current
125°C tests
IDRM
IRRM
VGT
IGT
VTM
dvc/dt
IGR
IH
- 0.5 10
- 0.5 10
0.4 0.55 0.8
- 30 200
- 1.8 2.5
100 -
-
- 0.5 10
0.3 - 5.0
µA
µA
V
µA
V
V/µs
µA
mA
High temperature off state current
High temperature reverse current
High temperature gate non-trigger voltage
IDRM - 15 100 µA
IRRM - 15 100 µA
VGD 0.2 -
-
V
High temperature holding current
-65 °C tests
IH 0.2 - - mA
Low temperature gate trigger voltage
VGT - - 1.0 V
Low temperature gate trigger current
IGT - - 500 µA
Low temperature holding current
IH - - 15 mA
Voltage ratings apply over the full operating temperature range provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used.
Test Conditions
RGK = 1K, VDRM = +rating
RGK = 1K, VRRM = - rating
RGS = 100ohms, VD = 5V
RGS > 10K ohms, VD = 5V
ITM = 2A (pulse test)
Specified test circuit
VGRM = 5V, anode open
IG = -150µA, VD = 5V
RGK = 1K, VDRM = + rating
RGK = 1K, VRRM = - rating
RGS = 100 ohms, VD = 5V
IG = -150µA, VD = 5V
RGK = 100 ohms, VD = 5V
RGK > 10K ohms, VD = 5V
IG = -150µA, VD = 5V
Rev. 20130116

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