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S6200A fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTIFIERS

Numéro de référence S6200A
Description SILICON CONTROLLED RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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S6200A fiche technique
S6200, S6210, S6220
SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
S6200A, S6210A, S6220A
S6200B, S6210B, S6220B
S6200D, S6210D, S6220D
S6200M, S6210M, S6220M
VRRM, VDRM
100
200
400
600
Volts
Peak non-repetitive forward and non-repetitive reverse blocking voltage(1)
S6200A, S6210A, S6220A
S6200B, S6210B, S6220B
S6200D, S6210D, S6220D
S6200M, S6210M, S6220M
VDSM, VRSM
150
250
500
700
Volts
Forward on-state current RMS (TC = 75°C)
IT(RMS) 20 Amps
Peak non-repetitive surge current
(one cycle, 60Hz, preceded and followed by rated current, TC = 75°C)
ITSM 200 Amps
Circuit fusing considerations
(TJ = -65 to +100°C, t = 8.3ms)
I2t 170 A2s
Peak gate power (10µs max.)
PGM 40 Watts
Average gate power
PG(AV) 0.5 Watts
Operating junction temperature range
TJ -65 to +100 °C
Storage temperature range
Tstg -65 to +150
°C
Mounting torque
30 In. lb.
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated
blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
S6200 SERIES
S6210 SERIES, S6220 SERIES
Symbol
RӨJC
Maximum
1.2
1.4
Unit
°C/W
Rev. 20150306

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