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PDF 2N3019 Data sheet ( Hoja de datos )
| Número de pieza | 2N3019 | |
| Descripción | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3019 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications
These Transistors are also Suitable for High Current Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25º C
Power Dissipation@ Tc=25ºC
Junction Temperature
Storage Temperature
VCEO
VCBO
VEBO
ICM
PD
Tj
Tstg
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
80
140
7
1
800
5
+200
-65 to +200
218.7
35
DESCRIPTION
SYMBOL
TEST CONDITION
MIN MAX
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
BVCEO *
BVCBO
BVEBO
ICBO
IEBO
VCE(sat) *
VBE(sat) *
IC=30mA,IB=0
IC=100µA, IE=0
IE=100µA, IC =O
VCB=90V, IE=0
VCB=90V, IE=0, Ta=150ºC
VEB=5V, IC=0
IC =150mA, IB =15mA
IC =500mA, IB =50mA
IC=150mA, IB =15mA
80
140
7
10
10
10
0.2
0.5
1.1
UNITS
V
V
V
A
mW
W
ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nΑ
µA
nΑ
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N3019.PDF ] | |
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