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PDF 2N4905 Data sheet ( Hoja de datos )

Número de pieza 2N4905
Descripción SILICON EPITAXIAL PNP TRANSISTOR
Fabricantes TT 
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No Preview Available ! 2N4905 Hoja de datos, Descripción, Manual

SILICON EPITAXIAL
PNP TRANSISTOR
2N4905
Low Collector Saturation Voltage.
Hermetic TO3 Metal Package.
Designed For General Purpose, Switching
and Power Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-5A
IB Base Current
-1.0A
PD Total Power Dissipation at TC = 25°C
87.5W
Derate Above 25°C
0.5W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
2 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8298
Website: http://www.semelab-tt.com
Issue 1
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