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PDF MMBR901 Data sheet ( Hoja de datos )
| Número de pieza | MMBR901 | |
| Descripción | NPN Silicon High-Frequency Transistor | |
| Fabricantes | Lunsure Electronic | |
| Logotipo |  |
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMBR901
Description
• High Current-Gain – Bandwidth Products
• Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ)
• High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz
• Operating & Storage Temperature: -55°C to +150°C
• Marking Code: 7A
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO 15 Vdc
VCBO 25 Vdc
VEBO 2.0 Vdc
Collector Current - Continuous
IC 30 mAdc
Thermal Resistance, Junction to Case
RqJC 250 oC/W
Power Dissipation @ TC=75oC (1)
Derate above 75oC
PD(max)
0.300
4.0
Watt
mW/oC
Electrical Characteristics @ 25oC Unless Otherwise Noted
Characteristics
OFF CHARACTERISTICS
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0mAdc, IB = 0)
Collector-Base Breakdow n Voltage
(IC = 0.1mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
V (BR)CEO
15
Vdc
V (BR)CBO
25
Vdc
V (BR)EBO
2.0
Vdc
ICBO 50 NAdc
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
hFE 50 200
Output Capacitance
(VCB =10Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Common-Emitter Amplifier Gain
(VCC =6.0Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Cobo
Gpe
1.0 pF
12 dB
Note: 1. Case temperature measured on collector lead
immediately adjacent to body of package
NPN Silicon
High-Frequency
Transistor
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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