|
|
Numéro de référence | 2N3485 | ||
Description | GENERAL PURPOSE TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
2N2904,A, 2N2905A
2N2906,A, 2N2907,A,
2N3485A 2N3486,A
JAN, JTX, JTXV AVAILABLE*
CASE 79-02, STYLE 1
2N2904/2905 TO-39 (TO-205AD)
CASE 22-03, STYLE 1
2N2906/2907 TO-18 (TO-206AA)
CASE 26-03, STYLE 1
2N3485/3486 TO-46 (TO-206AB)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol Non-A Suffix
A-Suffix
vCEO
vCBO
v EBO
40
60
5.0
60
ic 600
2N2904.A 2N2906.A 2N3485.A
2N2905,A 2N2907.A 2N3486,A
Unit
Vdc
Vdc
Vdc
mAdc
PD
mW600 400 400
3.43
2.28
2.28 mW/°C
pd
TJ- Tstg
3.0
17.2
1.8
10.3
2.0
11.43
-65 to +200
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
dC = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
dC = 10/iAdc, l£ = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /tAdc, Ic = 0)
Collector Cutoff Current
(VC £ = 30 Vdc, V B e = 0.5 Vdc)
Collector Cutoff Current
(VC b = 50 Vdc, El = 0)
Non-A Suffix
A-Suffix
Non-A Suffix
A-Suffix
(Vcb = 50 Vdc, El = 0, TA = 150°C)
Base Current
(Vce = 30 Vdc, V B e = 0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
flC = 0.1 mAdc, Vce
10 Vdc)
Non-A Suffix
A-Suffix
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A, 2N2907A, 2N3486A
dC = 1.0 mAdc, Vce = 10 Vdc)
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A, 2N2907A, 2N3486A
dC = 10 mAdc, VC e = 10 Vdc)
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A, 2N2907A, 2N3486A
dC = 150 mAdc, VC £ = 10 Vdc)(1)
2N2904A, 2N2906A, 2N3485,A
2N2905A, 2N2907A, 2N3486A
*ALSO AVAILABLE 2N2905ALJANS AND 2N2907AJANS
Symbol
v(BR)CEO
v (BR)CBO
v (BR)EBO
!CEX
ICBO
IB
hFE
Min
40
60
60
5.0
—
—
—
20
35
40
75
25
50
40
100
35
75
40
100
40
100
Typ Max Unit
- - Vdc
- - Vdc
- - Vdc
- 50 nAdc
- 0.020
/nAdc
0.010
20
10
- 50 nAdc
120
300
4-46
|
|||
Pages | Pages 3 | ||
Télécharger | [ 2N3485 ] |
No | Description détaillée | Fabricant |
2N3480 | Diode ( Rectifier ) | American Microsemiconductor |
2N3481 | Diode ( Rectifier ) | American Microsemiconductor |
2N3482 | Diode ( Rectifier ) | American Microsemiconductor |
2N3482 | Trans GP BJT PNP 60V 0.6A 3-Pin TO-46 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |