DataSheetWiki


2N3485 fiches techniques PDF

Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence 2N3485
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





1 Page

No Preview Available !





2N3485 fiche technique
2N2904,A, 2N2905A
2N2906,A, 2N2907,A,
2N3485A 2N3486,A
JAN, JTX, JTXV AVAILABLE*
CASE 79-02, STYLE 1
2N2904/2905 TO-39 (TO-205AD)
CASE 22-03, STYLE 1
2N2906/2907 TO-18 (TO-206AA)
CASE 26-03, STYLE 1
2N3485/3486 TO-46 (TO-206AB)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol Non-A Suffix
A-Suffix
vCEO
vCBO
v EBO
40
60
5.0
60
ic 600
2N2904.A 2N2906.A 2N3485.A
2N2905,A 2N2907.A 2N3486,A
Unit
Vdc
Vdc
Vdc
mAdc
PD
mW600 400 400
3.43
2.28
2.28 mW/°C
pd
TJ- Tstg
3.0
17.2
1.8
10.3
2.0
11.43
-65 to +200
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
dC = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
dC = 10/iAdc, = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /tAdc, Ic = 0)
Collector Cutoff Current
(VC £ = 30 Vdc, V B e = 0.5 Vdc)
Collector Cutoff Current
(VC b = 50 Vdc, El = 0)
Non-A Suffix
A-Suffix
Non-A Suffix
A-Suffix
(Vcb = 50 Vdc, El = 0, TA = 150°C)
Base Current
(Vce = 30 Vdc, V B e = 0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
flC = 0.1 mAdc, Vce
10 Vdc)
Non-A Suffix
A-Suffix
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A, 2N2907A, 2N3486A
dC = 1.0 mAdc, Vce = 10 Vdc)
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A, 2N2907A, 2N3486A
dC = 10 mAdc, VC e = 10 Vdc)
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A, 2N2907A, 2N3486A
dC = 150 mAdc, VC £ = 10 Vdc)(1)
2N2904A, 2N2906A, 2N3485,A
2N2905A, 2N2907A, 2N3486A
*ALSO AVAILABLE 2N2905ALJANS AND 2N2907AJANS
Symbol
v(BR)CEO
v (BR)CBO
v (BR)EBO
!CEX
ICBO
IB
hFE
Min
40
60
60
5.0
20
35
40
75
25
50
40
100
35
75
40
100
40
100
Typ Max Unit
- - Vdc
- - Vdc
- - Vdc
- 50 nAdc
- 0.020
/nAdc
0.010
20
10
- 50 nAdc
120
300
4-46

PagesPages 3
Télécharger [ 2N3485 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N3480 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor
2N3481 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor
2N3482 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor
2N3482 Trans GP BJT PNP 60V 0.6A 3-Pin TO-46 New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche