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Número de pieza | 2N2297 | |
Descripción | AMPLIFIER TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T/\ = 25°C
Derate above 25°C
Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
VEBO
ic
PD
pd
TJ, Tstg
Value
35
80
7.0
1.0
800
4.56
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Temperature, 1/16" from Case
for 10 seconds
Symbol
R<uc
RajAd)
TL
Max
35
219
300
Unit
°c/w
°c/w
°c
2N2297
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(2)
dC = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 ^Adc, El = 0)
Emitter-Base Breakdown Voltage
E(l = 100/uAdc, lc = 0)
Collector Cutoff Current
(Vcb = 6° Vd c, ie = o)
(v C b = 6° vdc, i£ = o, Ta = +i5o°o
Emitter Cutoff Current
(Veb = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS^)
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
'EBO
DC Current Gain
dC = 10 mAdc, Vce = 10 Vdc)
(IC = 150 mAdc, Vce = 10 Vdc)
dC = 1.0 Adc, Vqe = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
dC = 1.0 Adc, Ib = 100 mAdc)
hFE
v CE(sat)
Base-Emitter Saturation Voltage
c(l = 1.0 Adc, Ib = 100 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mAdc, Vce = 10 Vdc, f =
VBE(sat)
Output Capacitance
(V C b = 10 Vdc, EI
0, f = 100 kHz)
Cobo
Input Capacitance
(V EB = 0.5 Vdc, lc
0, f = 100 kHz)
Cibo
Collector Base Time Constant
dC = 10 mAdc, Vcb = 10 Vdc, f
4.0 MHz)
(1) R^jA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width =s 300 /lis, Duty Cycle s 2.0%.
Min
35
80
7.0
-
—
Typ
—
—
—
-
—
0.1
0.6
60
— Vdc
— Vdc
— Vdc
10 nAdc
10 /xAdc
10 nAdc
0.2
1.0
MHz
PF
PF
4-31
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2N2297.PDF ] |
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