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MA-COM - Radiation Hardened NPN Silicon Switching Transistors

Numéro de référence 2N2222UB
Description Radiation Hardened NPN Silicon Switching Transistors
Fabricant MA-COM 
Logo MA-COM 





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2N2222UB fiche technique
2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Rev. V1
Features
Qualified to MIL-PRF-19500/255
Levels
JANSM-3K Rads (Si) JAN
JANSD-10K Rads (Si) JANTX
JANSP-30K Rads (Si) JANTXV
JANSL-50K Rads (Si) JAN
JANSR-100K Rads (Si)
TO-18 (TO-206AA), Surface mount UA & UB
Packages
Applications
Switching and Linear Applications
DC and VHF Amplifier Applications
Electrical Specifications @ TA = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Off Characteristics:
Collector - Emitter Breakdown
IC = 10 mAdc
V(BR)CEO Vdc
50
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
VCB = 75 Vdc
VCB = 60 Vdc
VEB = 6.0 Vdc
VEB = 4.0 Vdc
ICBO1
ICBO2
IEBO1
IEBO2
µAdc
nAdc
µAdc
nAdc
10
10
10
10
Collector - Emitter Cutoff Current
VCE = 50 Vdc
ICES nAdc
50
On Characteristics1:
Forward Current Transfer Ratio
Collector - Base Cutoff Current
2N2221A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
2N2222A, L, UA, UB
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10.0 mAdc, VCE = 10 Vdc
IC = 150.0 mAdc, VCE = 10 Vdc
IC = 500.0 mAdc, VCE = 10 Vdc
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base - Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.
hFE
VCE(sat) Vdc
VBE(sat) Vdc
30
35
40
40
20
50
75
100
100
30
0.6
150
120
325
11
120
0.3
1.0
1.2
2.0
1 (Continued next page)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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