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C233E fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTIFIERS

Numéro de référence C233E
Description SILICON CONTROLLED RECTIFIERS
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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C233E fiche technique
C230, C231, C230()3, C231()3,
C232, C233 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive off state voltage(1)
(TJ = -40 to +100°C)
C230F, C231F, C230F3, C231F3, C232F, C233F
C230A, C231A, C230A3, C231A3, C232A, C233A
C230B, C231B, C230B3, C231B3, C232B, C233B
C230C, C231C, C230C3, C231C3, C232C, C233C
C230D, C231D, C230D3, C231D3, C232D, C233D
C230E, C231E, C230E3, C231E3, C232E, C233E
C230M, C231M, C230M3, C231M3, C232M, C233M
Peak non-repetitive reverse voltage
(TJ = -40 to +100°C)
C230F, C231F, C230F3, C231F3, C232F, C233F
C230A, C231A, C230A3, C231A3, C232A, C233A
C230B, C231B, C230B3, C231B3, C232B, C233B
C230C, C231C, C230C3, C231C3, C232C, C233C
C230D, C231D, C230D3, C231D3, C232D, C233D
C230E, C231E, C230E3, C231E3, C232E, C233E
C230M, C231M, C230M3, C231M3, C232M, C233M
Forward current RMS
Peak surge current
(one cycle, 60Hz, TC = -40 to +100°C)
Circuit fusing considerations
(TC = -40 to +100°C, t = 8.3ms)
Peak gate power
Average gate power
Peak forward gate current
Operating junction temperature range
Storage temperature range
Mounting torque
Symbol
Value
VRRM, VDRM
50
100
200
300
400
500
600
VRSM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
75
150
300
400
500
600
720
25
250
260
5
0.5
2
-40 to +100
-40 to +125
30
Unit
Volts
Volts
Amps
Amps
A2s
Watts
Watts
Amps
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Pressfit
Isolated stud
Symbol
RӨJC
Maximum
1
1.15
Unit
°C/W
Rev. 20130128

PagesPages 4
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