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PDF VS-20ETF02-M3 Data sheet ( Hoja de datos )
| Número de pieza | VS-20ETF02-M3 | |
| Descripción | Fast Soft Recovery Rectifier Diode | |
| Fabricantes | Vishay | |
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VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
2
TO-220AC
3
1
Base
cathode
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-220AC
20 A
200 V, 400 V, 600 V
1.3 V
300 A
60 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Range
Sinusoidal waveform
1 A, 100 A/μs
10 A, TJ = 25 °C
Range
VALUES
200 to 600
20
300
60
1.2
-40 to +150
VOLTAGE RATINGS
PART NUMBER
VS-20ETF02PbF, VS-20ETF02-M3
VS-20ETF04PbF, VS-20ETF04-M3
VS-20ETF06PbF, VS-20ETF06-M3
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
200
400
600
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
UNITS
V
A
ns
V
°C
IRRM
AT 150 °C
mA
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94096
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
4.0
3.5 20ETF.. Series
TJ = 25 °C
3.0
2.5
IFM = 30 A
IFM = 20 A
2.0
IFM = 10 A
1.5
1.0
0.5
0
0
IFM = 5 A
IFM = 1 A
200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
10
9 20ETF.. Series
TJ = 150 °C
8
IFM = 30 A
7
6 IFM = 20 A
5
4 IFM = 10 A
3
2 IFM = 5 A
1 IFM = 1 A
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
1
0.1
0.01
0.0001
Steady state value
(DC operation)
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.001
0.01
Square Wave Pulse Duration (s)
0.1
Fig. 14 - Thermal Impedance ZthJC Characteristics
1
Revision: 11-Feb-16
5 Document Number: 94096
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-20ETF02-M3.PDF ] | |
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