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PDF VS-15EWL06FN-M3 Data sheet ( Hoja de datos )
| Número de pieza | VS-15EWL06FN-M3 | |
| Descripción | Ultrafast Rectifier ( Diode ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
VS-15AWL06FN-M3, VS-15EWL06FN-M3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
VS-15AWL06FN-M3
Base cathode
4, 2
VS-15EWL06FN-M3
2, 4
1
Anode
3
Anode
1
N/C
D-PAK (TO-252AA)
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
D-PAK (TO-252AA)
15 A
600 V
1.05 V
60 ns
175 °C
Single die
FEATURES
• Ultrafast recovery time, extremely low VF and
soft recovery
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION/APPLICATIONS
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 148 °C
TJ = 25 °C
TC = 148 °C, f = 20 kHz, d = 50 %
VALUES
600
15
180
30
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
VBR,
VR
VF
IR = 100 μA
IF = 15 A
IF = 15 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 600 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
0.99
0.85
-
-
11
8
MAX. UNITS
-
1.05
0.92
10
120
-
-
V
μA
pF
nH
Document Number: 93568 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
VS-15AWL06FN-M3, VS-15EWL06FN-M3
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93568 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-15EWL06FN-M3.PDF ] | |
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