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Número de pieza | 2N2575 | |
Descripción | SILICON CONTROLLED RECTFIERS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N2575 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 2N2573-2N2579
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage (1)
2N2573
2N2574
2N2575
2N2576
2N2578
2N2579
On-state current
Circuit fusing (8.3ms)
Peak surge current
(Half cycle, 60Hz, TJ = -65° to +125°C)
Peak gate power – forward
Average gate power – forward
Peak gate current – forward
Peak gate voltage
Forward
Reverse
Operating junction temperature range
Storage temperature range
Thermal resistance, junction to case
Symbol
VDRM or VRRM
IT(RMS)
I2t
ITSM
PGM
PG(AVG)
IGM
VGFM
VGRM
TJ
Tstg
RӨJC
Value
25
50
100
200
400
500
25
280
260
5
0.5
2
10
5
-65 to +125
-65 to +150
1.5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM, IRRM
-
-
-
0.6
10
5
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
IGT -
- 40
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = rated VDRM, RL = 100Ω, T J = 125°C)
VGT -
0.7 3.5
0.3 -
-
Forward on voltage
(ITM = 20A)
VTM -
1.1 1.4
Holding current
(VD = 7V, gate open)
IH - 10 -
Turn-on time (td + tr)
(IGT = 50mA, IT = 10A, VD = rated VDRM)
tgt - 1 -
Unit
Volts
Amps
A2s
Amps
Watts
Watts
Amps
Volts
°C
°C
°C/W
Unit
µA
mA
mA
Volts
Volts
mA
µs
Rev. 20130116
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N2575.PDF ] |
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