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2N1848A fiches techniques PDF

Digitron Semiconductors - SILICON CONTROLLED RECTIFIER

Numéro de référence 2N1848A
Description SILICON CONTROLLED RECTIFIER
Fabricant Digitron Semiconductors 
Logo Digitron Semiconductors 





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2N1848A fiche technique
2N1842-2N1850A
TR1010-TR9010
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
RMS on-state current @ TC = 80°C
Mean on-state current @ TC = 80°C
Non-repetitive surge peak on-state current @ TJ ≤ 125°C
t = 8.3ms
t = 10ms
I2t for fusing @ TJ ≤ 125°C, t = 10ms
Critical rate of rise of on-state current
Operating junction temperature range
Storage temperature range
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
di/dt
TJ
Tstg
Value
16
10
157
150
112.5
100
-40 to +150
-40 to +125
Unit
A
A
A
A2s
A/µs
°C
°C
VOLTAGE RATINGS
TJ =
125°C
2N
1842(A)
2N
1843(A)
2N
1844(A)
2N
1846(A)
2N
1848(A)
2N
1849(A)
2N TR
1850(A)
6010
VOLTS
TR
7010
TR
8010
TR
9010
TR
1010
TR
1110
TR
1210
VDRM =
VRRM
25
50
100
200
300
400
500
600
700
800
900
1000
1100
1200
THERMAL RESISTANCE
Thermal resistance
Junction to case for DC
Case to heatsink
Symbol
Rth(j-c)
Rth(c-h)
Value
2
0.4
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Value
Min Typ Max
Unit
Gate trigger current
IGT - - 80 mA
Gate trigger voltage
VGT - - 3 V
Peak gate voltage
VGD 0.25 -
-
Holding current
IH - 20 - mA
Peak on-state voltage
Maximum off-state current
Maximum off-state current
VTM - - 2.2 V
IDRM - - 5 mA
IRRM - - 5 mA
Turn on time
tgt - 2 - µs
Turn off time
Critical rise of off-state voltage
tq
- 100 -
µs
dv/dt 100
-
- V/µs
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
IG = 200mA
TJ = 125°C
diR/dt = 30A/µs
TJ = 125°C
Test conditions
VD = 12V
VD = 12V
VD = VDRM
IT = 0.5A
RL = 33Ω
RL = 33Ω
RL = 3.3Ω
Gate
open
tp ≥ 20µs
tp ≥ 20µs
ITM = 30A
VDRM specified
VRRM specified
IT = 30A
diG/dt = 2A/µs
IT = 10A
dv/dt = 20V/µs
tp = 10ms
VD = VDRM
VR = 30V
VD = 0.67
VDRM
Gate open
Linear slope up to 0.67 VDRM specified
Rev. 20150306

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