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PDF 2N5199 Data sheet ( Hoja de datos )
| Número de pieza | 2N5199 | |
| Descripción | N-Channel Dual Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET | |
| Logotipo |  |
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8/2014
2N5196, 2N5197, 2N5198, 2N5199
N-Channel Dual Silicon Junction Field-Effect Transistor
∙ Differencial Inputs
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage V(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current
(pulsed)
IGSS
VGS(OFF)
IDSS
Dynamic Electrical Characteristics
Common-Source Forward
Transconductance
gfs
Common-Source Input
Capacitance
Ciss
Common-Source Reverse
Transfer Capacitance
Crss
Equivalent Short Circuit Input
Noise Voltage
~eN
Differencial Gate-Source
Voltage
Differencial Gate Source
Voltage with Temperature
(VGS1-VGS2)
Δ│VGS1-VGS2│
ΔT
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -50V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 mW
Power Derating
2.6 mW/oC
Storage Temperature Range
-65oC to +150oC
2N5196, 2N5197, 2N5198, 2N5199
Min Typ Max Unit
-50 V
Process NJ16
Test Conditions
IG = -1 uA, VDS = 0 V
-25 pA VGS = -10 V, VDS = 0 V
-0.7 -4 V VDS = 10 V, VGS = 0 V
0.7 7 mA VDS = 10 V, VGS = 0 V
1 4 mS VDS = 10 V, ID = 5 mA f = 1 kHz
6 pF VDS = -10 V, VGS = 1 V f = 1 MHz
2 pF VDS = 10 V, ID = 5 mA f = 1 MHz
20 nV/√Hz VDS = 10 V, ID = 5 mA f = 1 kHz
2N5196
Min Max
2N5197
Min Max
2N5198
Min Max
2N5199
Min Max
Unit
s
5 5 10 15 mV
5
10
20
40
μV/°
C
Test
Conditions
VDS = 10 V,
ID = -10 mA
VDG = 10 V,
ID = 30 μA
Surface Mount Version:
SMP5196, SMP5197,
SMP5198, SMP5199
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
(972) 238-9700 Fax (972) 238-5338
www.interfet.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5199.PDF ] | |
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