2N5546 Datasheet PDF - Siliconix
| Part Number | 2N5546 | |
| Description | Monolithic N-Channel JFET Duals | |
| Manufacturers | Siliconix | |
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2N5545/46/47/JANTX/JANTXV
Monolithic N-Channel JFET Duals
Product Summary
Part Number
2N5545
2N5546
2N5547
VGS(off) (V)
–0.5 to –4.5
–0.5 to –4.5
–0.5 to –4.5
V(BR)GSS Min (V)
–50
–50
–50
gfs Min (mS)
1.5
1.5
1.5
IG Max (pA)
–50
–50
–50
jVGS1 – VGS2j Max (mV)
5
10
15
Features
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D High CMRR: 100 dB
Benefits
Applications
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
Description
The 2N5545/5546/5547JANTX/JANTXV are monolithic
dual n-channel JFETs designed to provide high input
impedance (IG < 50 pA) for general-purpose differential
amplifiers. The 2N5545 features minimum system error
and calibration (5-mV offset maximum).
The TO-71 package is available with full military
processing (see Military Information).
TO-71
S1
1
G2
6
D1 2
5 D2
3
G1
4
Top View
S2
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70253.
Siliconix
P-37514—Rev. B, 25-Jul-94
1
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2N5545/46/47/JANTX/JANTXV
Typical Characteristics (Cont’d)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
8
6
VDS = 0 V
4
5V
2
15 V
0
0 –4
–8 –12 –16
VGS – Gate-Source Voltage (V)
–20
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
ID @ 200 mA
12
8 VGS = 0 V
4
0
10
100 1 k 10 k
f – Frequency (Hz)
100 k
Common-Source Forward Transconductance
vs. Drain Current
2.5
VGS(off) = –2 V
2.0
VDS = 15 V
f = 1 kHz
TA = –55_C
1.5
25_C
1.0
0.5 125_C
0
0.01
0.1
ID – Drain Current (mA)
Siliconix
P-37514—Rev. B, 25-Jul-94
1
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
4
3 VDS = 0 V
5V
2
1 15 V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
2.5
VGS(off) = –2 V
2.0
VDS = 15 V
f = 1 kHz
TA = –55_C
1.5
1.0 25_C
0.5
125_C
0
0.01
0.1
1
ID – Drain Current (mA)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1 k 10
800 gos 8
600 6
400 4
rDS
200
0
0
2
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 15 V, VGS = 0 V, f = 1 kHz
0
–1 –2 –3 –4 –5
VGS(off) – Gate-Source Cutoff Voltage (V)
5
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