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PDF 2N4949 Data sheet ( Hoja de datos )
| Número de pieza | 2N4949 | |
| Descripción | PN UNIJUNCTION TRANSISTORS | |
| Fabricantes | Digitron Semiconductors | |
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2N4948, 2N4949
High-reliability discrete products
and engineering services since 1977
PN UNIJUNCTION TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
RMS power dissipation(1)
PD 360 mW
RMS emitter current
Peak pulse emitter current(2)
Ie 50 mA
ie 1.0 Amp
Emitter reverse voltage
VB2E 30 Volts
Storage temperature range
Tstg -65 to 200 °C
Note 1: Derate 2.4mW/°C increase in ambient temperature. Total power dissipation must be limited by external circuitry. Interbase voltage limited by power dissipation: V B2B1 = √(RBB*PD)
Note 2: Capacitance discharge current must fail to 0.37A within 3.0ms and PRR ≤ 10PPS.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max Unit
Intrinsic standoff ratio
(VB2B1 = 10V)(1)
2N4948
η
0.55
-
0.82 -
2N4949
0.74 - 0.86
Interbase resistance
(VB2B1 = 3.0V, IE = 0)
RBB 4.0 7.0 12.0 kohms
Interbase resistance temperature coefficient
(VB2B1 = 3.0V, IE = 0, TA = -65° to 100°C
Emitter saturation voltage
(VB2B1 = 10V, IE = 50mA)(2)
αRBB
0.1
-
0.9 %/°C
VEB1(sat)
-
2.5 3.0 Volts
Modulated interbase current
(VB2B1 = 10V, IE = 50mA)
Emitter reverse current
(VB2E = 30V, IB1 = 0)
(VB2E = 30V, IB1 = 0, TA = 125°C)
IB2(mod)
12
15
- mA
IEB20 - 5.0 10 nA
- - 1.0 µA
Peak point emitter current
(VB2B1 = 25V)
2N4948
2N4949
IP
- 0.6 2.0 µA
- 0.6 1.0
Valley point current
(VB2B1 = 20V, RB2 = 100ohms)(2)
Base-one peak pulse voltage (3)
IV 2.0 4.0
2N4949
VOB1
3.0
5.0
2N4948
6.0 8.0
- mA
- Volts
-
Maximum oscillation frequency
f(max)
- 1.25 - MHz
Note 1: Intrinsic standoff ratio: η = (VP-VEB1)/VB2B1, where VP = peak point emitter voltage, VB2B1 = interbase voltage, and VEB1 = emitter to base-one junction diode drop
(≈ 0.45V @ 10µA)
Note 2: Use pulse techniques: PW ≈ 300µs duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
Note 3: Base-one peak pulse voltage is measured in circuit of Figure 3. This specification is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of
pulse circuits.
Rev. 20150520
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4949.PDF ] | |
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