|
|
Número de pieza | 2N4870 | |
Descripción | SILICON CONTROLLED RECTIFIERS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N4870 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 2N4870, 2N4871
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
RMS power dissipation(1)
RMS emitter current
Peak pulse emitter current(2)
Emitter reverse voltage
Interbase voltage †
Operating junction temperature range
Storage temperature range
Note 1: Derate 3.04mW/°C increase in ambient temperature.
Note 2: Duty cycle ≤ 1%. PRR = 10PPS.
† Base upon power dissipa on at TA = 25°C.
Symbol
PD
Ie
ie
VB2E
VB2B1
TJ
Tstg
Value
300
50
1.5
30
35
-55 to 125
-55 to 150
Unit
mW
mA
Amp
Volts
Volts
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max Unit
Intrinsic standoff ratio
(VB2B1 = 10V)(1)
2N4870
η
0.56
-
0.75 -
2N4871
0.70 - 0.85
Interbase resistance
(VB2B1 = 3.0V, IE = 0)
RBB 4.0 6.0 9.1 kohms
Interbase resistance temperature coefficient
(VB2B1 = 3.0v, IE = 0, TA = -65° to 125°C
αRBB
0.1
-
0.9 %/°C
Emitter saturation voltage
(VB2B1 = 10V, IE = 50mA)(2)
VEB1(sat)
-
2.5
- Volts
Modulated interbase current
(VB2B1 = 10V, IE = 50mA)
Emitter reverse current
(VB2E = 30V, IB1 = 0)
IB2(mod)
-
15
- mA
IEB20
-
0.005
1.0
µA
Peak point emitter current
(VB2B1 = 25V)
IP - 1.0 5.0 µA
Valley point current
(VB2B1 = 20V, RB2 = 100ohms)(2)
2N4870
2N4871
IV
2.0 5.0
4.0 7.0
- mA
-
Base-one peak pulse voltage
2N4870
VOB1
3.0
6.0
2N4871
5.0 8.0
- Volts
-
Note 1: Intrinsic standoff ration: VP = η VB2B1+ VF, where VF is about 0.49V at 25°C @ IF = 10µA and decreases with temperature at about 2.5mV/°C. Components R1, C1, and the UJT form a
relaxation oscillator; the remaining circuitry serves as a peak –voltage detector. The forward drop of diode D1 compensates for VR. To use, the “cal” button is pushed and R3 is adjusted to make the
current meter, M1, read full scale. When the “cal” button is released, the value of η is read directly from the meter, if full scale on the meter reads 1.0.
Note 2: Use pulse techniques: PW ≈ 300µs duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
Rev. 20120705
1 page High-reliability discrete products
and engineering services since 1977
2N4870, 2N4871
SILICON CONTROLLED RECTIFIERS
Rev. 20120705
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N4870.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N4870 | PN UNIJUNCTION TRANSISTORS SILICON UNIJUNCTION TRANSISTORS | Boca Semiconductor Corporation |
2N4870 | SILICON UNIJUNCTION TRANSISTOR | New Jersey Semiconductor |
2N4870 | SILICON PN UNIJUNCTION TRANSISTORS | Central Semiconductor |
2N4870 | Unijunction Transistor | Multicomp |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |