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PDF 2N4871 Data sheet ( Hoja de datos )
| Número de pieza | 2N4871 | |
| Descripción | Unijunction Transistor | |
| Fabricantes | Multicomp | |
| Logotipo |  |
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Unijunction Transistor
Description:
A PN unijunction transistor in a TO–92 type package
designed for use in pulse and timing circuits, sensing circuits and
thyristor trigger circuits
Absolute maximum Ratings:
(Ta = +25°C unless otherwise specified)
Power Dissipation, Pd
Derate Above 25°C
RMS Emitter Current, Ie(rms)
Peak Pulse Emitter Current (Note 1) Current, ie
Emitter Reverse Voltage, Vb2e
Interbase Voltage, Vb2b1
Operating Junction Temperature Range, Tj
Storage Temperature Range, Tstg
: 300mW
: 3.0mW/°C
: 50mA
: 1.5A
: 30V
: 35V
: -65°C to +125°C
: -65°C to +150°C
Electrical Characteristics: (Ta = +25ºC Unless otherwise specified)
Parameter
Instrinsic Standoff Ratio
Symbol
Test Conditions
Vb2b1 = 10V, Note3
Min
0.70
Interbase Resistance
rbb
4.0
Interbase Resistance Temperature
Coefficient
0.1
Emitter Saturation Voltage
Modulated interbase Current
Veb1(sat)
Ib2(mod)
Vb2b1 = 10V, Ie = 50mA, Note 4
Vb2b1 = 10V, Ie = 50mA
-
-
Emitter Reverse Current
Peak Point Emitter Current
Ieb20
Ip
Vb2e = 30V, Ib1 = 0
Vb2b1 = 25V
-
-
Valley Point Current
Iv
Vb2b1 = 20V, Rb2 = 100Ω, Note 4
4
Base-One Peak Pulse Voltage
VOb1
5
Typ Max
- 0.85
6.0 9.1
- 0.9
2.5 -
15 -
0.005 1
15
7-
8-
Unit
-
kΩ
%/ºC
V
mA
µA
µA
mA
V
Notes:
1. Duty Cycle <= 1% PRR = 10PPS.
2. Based upon power dissipation at Ta = +25°C
3. Intrinsic standoff ratio is essentially constant with temperature and interbase voltage and is defined by the equation:
Vp – Vbb + Vd
W here: Vp = Peak Point Emitter Voltage; Vbb = interbase Voltage;
Vd = Junction Diode Drop (~0.5V).
4. Use Pulse techniques: Pulse width ~ 300µS, Duty Cycle <= 2% to avoid internal heating due to interbase modulation which
may result in erroneous readings.
www.element14.com
www.farnell.com
www.newark.com
Page <1>
10/09/12 V1.0
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4871.PDF ] | |
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