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2N2646 fiches techniques PDF

Central Semiconductor - SILICON PN UNIJUNCTION TRANSISTORS

Numéro de référence 2N2646
Description SILICON PN UNIJUNCTION TRANSISTORS
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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2N2646 fiche technique
2N2646
2N2647
SILICON
PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2646 and
2N2647 devices are silicon PN Unijunction Transistors
designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
MAXIMUM RATINGS: (TA=25°C)
Emitter Reverse Voltage
SYMBOL
VB2E
Interbase Voltage
VB2B1
RMS Emitter Current
Ie
Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie
RMS Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
30
35
50
2.0
300
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2646
SYMBOL TEST CONDITIONS
MIN MAX
VB2B1=10V
0.56 0.75
RBB
VB2B1=3.0V
4.7 9.1
IEB2O
VB2E=30V
- 12
IV VB2B1=20V, RB2=100Ω
4.0 -
IP VB2B1=25V
- 5.0
VOB1
V1=20V
3.0 -
2N2647
MIN MAX
0.68 0.82
4.7 9.1
- 0.2
8.0 18
- 2.0
6.0 -
UNITS
V
V
mA
A
mW
°C
UNITS
μA
mA
μA
V
R1 (2-December 2013)

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