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Numéro de référence | 2N2646 | ||
Description | SILICON PN UNIJUNCTION TRANSISTORS | ||
Fabricant | Central Semiconductor | ||
Logo | |||
1 Page
2N2646
2N2647
SILICON
PN UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2646 and
2N2647 devices are silicon PN Unijunction Transistors
designed for general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-18 (UJT) CASE
MAXIMUM RATINGS: (TA=25°C)
Emitter Reverse Voltage
SYMBOL
VB2E
Interbase Voltage
VB2B1
RMS Emitter Current
Ie
Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie
RMS Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
30
35
50
2.0
300
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2646
SYMBOL TEST CONDITIONS
MIN MAX
VB2B1=10V
0.56 0.75
RBB
VB2B1=3.0V
4.7 9.1
IEB2O
VB2E=30V
- 12
IV VB2B1=20V, RB2=100Ω
4.0 -
IP VB2B1=25V
- 5.0
VOB1
V1=20V
3.0 -
2N2647
MIN MAX
0.68 0.82
4.7 9.1
- 0.2
8.0 18
- 2.0
6.0 -
UNITS
V
V
mA
A
mW
°C
UNITS
kΩ
μA
mA
μA
V
R1 (2-December 2013)
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Pages | Pages 3 | ||
Télécharger | [ 2N2646 ] |
No | Description détaillée | Fabricant |
2N2640 | DUAL AMPLIFIER TRANSISTORS NPN SILICON | Motorola Semiconductors |
2N2640 | DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT | New Jersey Semiconductor |
2N2641 | DUAL AMPLIFIER TRANSISTORS NPN SILICON | Motorola Semiconductors |
2N2641 | DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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