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Número de pieza | 2N1893 | |
Descripción | GENERAL PURPOSE TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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For Specifications, See 2N718A Data.
2N1893
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous -
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation (S Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
v CEO
VCER
VCBO
VEBO
ic
PD
pd
Tj, Tstg
Value
80
100
120
7.0
0.5
0.8
4.57
3.0
17.2
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°C
Refer to 2N3019 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
R&JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 100 mAdc, RgE = 1° ohms)
Collector-Emitter Sustaining Voltaged) (Ic = 30 mAdc, lg = 0)
Collector-Base Breakdown Voltage [\q = 100 /xAdc, Ie = 0)
Emitter-Base Breakdown Voltage (l|= = 100 /xAdc, Ic = 0)
Collector Cutoff Current (Vcb = 90 Vdc, Ie = 0)
(V CB = 90 Vdc, Ie = 0, Ta = 150°C)
Emitter Cutoff Current (Vbe = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gaind)
(Ic = 0.1 mAdc, Vce = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
C(l = 10 mAdc, V C e = 10 Vdc, Ta = -55°C)
C(l = 150 mAdc, V CE = 10 Vdc)
Collector-Emitter Saturation Voltage (Ic = 50 mAdc, lg = 5.0 mAdc)
(lC = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltage 0c = 50 mAdc, Ib = 5.0 mAdc)
(lC = 150 mAdc, Ib = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product (Ic = 50 mAdc, Vce = 1° Vdc, f = 20 MHz)
Output Capacitance (Vcb = 1° Vdc, Ie = 0, 100 kHz « f « 1.0 MHz)
Input Capacitance (Vbe = °- 5 Vdc, Ic = 0, 100 kHz =s f =s 1.0 MHz)
Input Impedance (Ic = 1.0 mAdc, Vcb = 50 Vdc, f = 1.0 kHz)
C(l = 5.0 mAdc, VC b = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio dc = 10 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, Vcb = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain (Ic = 1.0 mAdc, Vce = 5 -° Vdc, f = 1.0 kHz)
C(l = 5.0 mAdc, VC e = 10 Vdc, f = 1.0 kHz)
Output Admittance dc = 1.0 mAdc, Vcb = 50 Vdc, f = 1.0 kHz)
C(l = 5.0 mAdc, VC B = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width =s 300 /xs, Duty Cycle « 2.0%.
Symbol
vCER(sus)
VCEO(sus)
V(BR)CBO
V(BR)EBO
'CBO
'EBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Qbo
hib
h rb
hfe
hob
Min
100
80
120
7.0
-
20
35
20
40
—
—
50
—
—
20
4.0
30
45
—
Max
58.3
219
—
—
—
—
0.01
15
0.01
120
1.2
5.0
0.9
1.3
—
15
85
30
8.0
1.25
1.5
100
0.5
0.5
Unit
°C/W
°C/W
Vdc
Vdc
Vdc
Vdc
/xAdc
/xAdc
Vdc
Vdc
MHz
pF
PF
Ohms
X 10-4
—
^mho
4-22
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 2N1893.PDF ] |
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