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PDF 2N930A Data sheet ( Hoja de datos )
| Número de pieza | 2N930A | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation (a TA = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Temperature
Temperature Range
Symbol
vCEO
vCBO
v EBO
'
ic
PD
pd
TJ' Tstg
2N930 2N930A
45 60
45 60
5.0 6.0
30
0.5
3.33
1.8
12
-65 to + 175
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
Watt
mW/°C
°C
2N930,A
JAN, JTX AVAILABLE
CASE 22, STYLE 1
TO-18 (TO-206AA)
AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.:
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
C(l = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
C(l = 10 jcAdc, l£ = 0)
Emitter-Base Breakdown Voltage
(l E = 10 tiAdc, Ic = 0)
2N930A
2N930
2N930A
Collector Cutoff Current
(VC E = 5.0 Vdc, Ib = 0)
Collector Cutoff Current
(VC B = 45 Vdc, Ie = 0)
2N930
2N930A
Collector Cutoff Current
(V C E = 45 Vdc, Vbe = 0)
2N930
2 N 930A
(VC E = 45 Vdc, Vbe = 0, TA = 170°C)
Emitter Cutoff Current
(V B E = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 /nAdc, Vce = 5.0 Vdc)
2N930
2N930A
2N930
2N930A
2N930A
C(l = 10 /xAdc, Vce = 5.0 Vdc)
2N930
2N930A
(lC = 10 /nAdc, Vce = 5.0 Vdc, TA = -55°C)
2N930
2N930A
(lC = 500 /nAdc, Vce = 5.0 Vdc)
2N930
2N930A
(lC = 10 mAdc, Vce = 5.0 Vdc) (1)
2N930
2N930A
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CEO
'CBO
ices
Min
45
80
5.0
6.0
—
-
!EBO
-
hFE
60
100
20
30
150
-
Max
-
—
-
2.0
10
2.0
10
2.0
10
2.0
10
2.0
—
300
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
/iAdc
nAdc
-
-
600
600
4-17
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N930A.PDF ] | |
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