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BFY52 fiches techniques PDF

TT - SILICON NPN TRANSISTOR

Numéro de référence BFY52
Description SILICON NPN TRANSISTOR
Fabricant TT 
Logo TT 





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BFY52 fiche technique
SILICON
NPN TRANSISTOR
BFY52
V(BR)CEO = 20V (Min).
Hermetic TO-39 Metal Package.
Ideally Suited General Purpose Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
40V
VCEO
Collector – Emitter Voltage
20V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
1.0A
PD Total Power Dissipation at TA = 25°C
0.8W
Derate Above 25°C
4.57mW/°C
PD Total Power Dissipation at TC = 25°C
5W
Derate Above 25°C
28.6mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max.
218.75
35
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 9729
Website: http://www.semelab-tt.com
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