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Numéro de référence | BFY51 | ||
Description | SILICON PLANAR TRANSISTORS | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR TRANSISTORS
BFY50, BFY51, BFY52
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
IC=10mA,IB=0
Collector Base Voltage
VCBO
IC=10µA,IE=0
Emitter Base Voltage
VEBO
IC=10µA,IC=0
Collector Cut off Current
ICBO
VCB=60V, IE=0
VCB=40V, IE=0
VCB=30V, IE=0
Tj =100oC
VCB=60V, IE=0
VCB=40V, IE=0
VCB=30V, IE=0
BFY50 BFY51 BFY52
35 30
20
80 60
40
6.0
1.0
0.8
4.6
5.0
28.6
-65 to +200
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
89.5 ºC/W
16.5 ºC/W
BFY50 BFY51
>35 >30
>80 >60
>6.0 >6.0
<50
<50
BFY52
>20
>40
>6.0
<50
UNITS
V
V
V
nA
nA
nA
<2.5
<2.5
<2.5
µA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4
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Pages | Pages 4 | ||
Télécharger | [ BFY51 ] |
No | Description détaillée | Fabricant |
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