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Motorola Semiconductors - HIGH CURRENT TRANSISTOR

Numéro de référence BFX40
Description HIGH CURRENT TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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BFX40 fiche technique
BFX38,39,40,41
CASE 79, STYLE 1
TO-39 (TO-205AD)
HIGH CURRENT TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation @Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VcEO
VCBO
VEBO
ic
PD
PD
TJ. T st g
BFX38 BFX40
BFX39 BFX41
55 75
55 75
5
1
1.25
7.15
7
40
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Refer to 2N4405 for graphs.
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Rhjc
Rwa
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
~~ ~
I
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mA)(1)
Collector-Base Breakdown Voltage
dC = 10 (jA)
Emitter-Base Breakdown Voltage
OE = 10 nA)
BFX38-39
BFX40-41
BFX38-39
BFX40-41
Collector Cutoff Current
(VcB = 40 V)
(VcB = 50 V)
(VcB = 40 V, TA = 125°C)
(VCB = 50 V, Ta = 125°C)
ON CHARACTERISTICS
BFX38-39
BFX40-41
BFX38-39
BFX40-41
Collector-Emitter Saturation Voltage
(IC = 150 mA, Ib = 15 mA)(1)
dC = 500 mA, Ib = 50 mA)(1)
DC Current Gain
dC = 100 uA, VcE = 5 V)(1)
BFX38-40
BFX39-41
dC = 100 mA, Vce = 5 V)(1)
BFX38-40
BFX39-41
(IC = 500 mA, Vce = 5 V)(1)
BFX38-40
BFX39-41
dc = 1 a, vce = 5 VXD
BFX38
BFX39
BFX40
BFX41
Emitter-Base Saturation Voltage
dC = 150 mA, Ib = 15 mA)(1)
dC = 500 mA, Ib = 15 mA)(1)
DC Current Gain
dC = 100 mA, Vce
5 V, TA = 125°C)(1) BFX38-40
BFX39-41
(1) Pulsed: Pulse Duration = 300 jis. Duty Cycle = 11
Symbol
V(BR)CEO
v (BR)CBO
V(BR)EB0
ICBO
v CE(sat)
hFE
VBE(sat)
hFE
55
75
55
75
60
30
85
40
60
25
30
15
25
10
30
15
Max
20
140
Max
50
50
50
50
0.15
0.5
0.9
1.1
Unit
°C/W
°c/w
Unit
nA
HA
4-224

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